发明名称 |
SEMICONDUCTOR DEVICES SUITABLE FOR NARROW PITCH APPLICATIONS AND METHODS OF FABRICATION THEREOF |
摘要 |
Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. In some embodiments, a semiconductor device may include a floating gate having a first width proximate a base of the floating gate that is greater than a second width proximate a top of the floating gate. In some embodiments, a method of shaping a material layer may include (a) oxidizing a surface of a material layer to form an oxide layer at an initial rate; (b) terminating formation of the oxide layer when the oxidation rate is about 90% or below of the initial rate; (c) removing at least some of the oxide layer by an etching process; and (d) repeating (a) through (c) until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.
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申请公布号 |
US2010062603(A1) |
申请公布日期 |
2010.03.11 |
申请号 |
US20090558370 |
申请日期 |
2009.09.11 |
申请人 |
GANGULY UDAYAN;YOKOTA YOSHITA;TANG JING;THIRUPAPULIYUR SUNDERRAJ;OLSEN CHRISTOPHER SEAN;SUN SHIYU;POON TZE WING;LIU WEI;SWENBERG JOHANES;NGUYEN VICKY U;SRINIVASAN SWAMINATHAN;NEWMAN JACOB |
发明人 |
GANGULY UDAYAN;YOKOTA YOSHITA;TANG JING;THIRUPAPULIYUR SUNDERRAJ;OLSEN CHRISTOPHER SEAN;SUN SHIYU;POON TZE WING;LIU WEI;SWENBERG JOHANES;NGUYEN VICKY U.;SRINIVASAN SWAMINATHAN;NEWMAN JACOB |
分类号 |
H01L21/311;H01L21/28 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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