发明名称 SEMICONDUCTOR CRYSTAL FINE PARTICLE THIN FILM
摘要 <P>PROBLEM TO BE SOLVED: To provide semiconductor crystal fine particle thin film which attains exciton emission and has proper rectification characteristics, a method for depositing the same, and an electroluminescence element which contains the thin film. <P>SOLUTION: In the semiconductor crystal fine particle thin film made of zinc oxide which is obtained, by using a hexa-&mu;-acetato-&mu;4-oxo-tetrazinc powder as a raw material to deposit it on a substrate having a substrate temperature of 250&deg;C or less by the reactive CVD method, a number-average particle size of the crystal fine particle is in the range of 0.3 to 20.0 nm, and a fixed amount of carboxylic acid is coordinated in zinc. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010056240(A) 申请公布日期 2010.03.11
申请号 JP20080218654 申请日期 2008.08.27
申请人 ASAHI KASEI CORP;NATIONAL UNIV CORP SHIZUOKA UNIV 发明人 MATSUYAMA HIROYOSHI;HAYASHI YUKIKO;KOBAYASHI KENKICHIRO
分类号 H01L21/365;H01L33/28 主分类号 H01L21/365
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