发明名称 TOP PANEL AND PLASMA PROCESSING APPARATUS USING THE SAME
摘要 <p>A top panel is integrally arranged with an opening section on a ceiling of a processing container of a plasma processing apparatus whose inside can be brought into vacuum state. The top panel is provided with a plurality of gas channels formed along a planar direction of the top panel, and a gas jetting port, which communicates with the gas channels and is opened on a top panel first surface facing inside the processing container.</p>
申请公布号 KR20100028106(A) 申请公布日期 2010.03.11
申请号 KR20107000848 申请日期 2008.08.21
申请人 TOKYO ELECTRON LIMITED;NATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY 发明人 ISHIBASHI KIYOTAKA;OHMI TADAHIRO;GOTO TETSUYA;OKESAKU MASAHIRO
分类号 H01L21/3065 主分类号 H01L21/3065
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