| 摘要 |
PURPOSE: A method for polishing a semiconductor wafer is provided to significantly improve the flatness of the front edge area of the wafer by applying different polishing profiles on the front side and the rear side of the wafer. CONSTITUTION: The front side and the rear side of a wafer are polished by chemical mechanical polishing. The material of the rear side is removed by a first profile. According to the first profile, the material in the center area of the rear side is removed more than the material in the edge area of the rear side. The material of the front side is removed by a second profile. According to the second profile, the material in the center area of the front side is removed more than the material in the edge area of the front side.
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