| 摘要 |
PROBLEM TO BE SOLVED: To provide a rear surface incident type photodetector and a manufacturing method thereof, capable of preventing assembling errors, when mounting a carrier. SOLUTION: A rear surface incident type APD100 includes: an n-InP contact layer 12 formed on an Fe-InP substrate 10; a light-receiving part 106; an N-type electrode mesa 102 and a P-type electrode mesa 104, which are formed on the n-InP contact layer 12 and comprise a p-InGaAs absorption layer 20; an N-type electrode 112, which is formed on the upper surface of the N-type electrode mesa 102 to be conductive to the n-InP contact layer 12; an isolation groove 40, which electrically separates the n-InP contact layer 12 between the light-receiving part 106 and the P-type electrode mesa 104; an SiN film 30 and SiO<SB>2</SB>film 34 for covering a part of or the entire part of light-receiving 106 and a P-type electrode mesa 104, and a P-type electrode 114, formed in the region including at least a part of the upper surface of the P-type electrode mesa 104 and a part of the upper surface of the light-receiving part 106. COPYRIGHT: (C)2010,JPO&INPIT
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