| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon processing method forming a structure small in a processing dimensional error even when there is an alignment error between a crystal axis orientation and an etching mask, a silicon substrate with an etching mask, and the like. SOLUTION: The silicon processing method includes: forming a mask pattern on a single-crystal silicon substrate 100 of which principal surface is (100) an equivalent face 103 or (110) an equivalent face; and applying crystal anisotropic etching to form a structure comprising (111) an equivalent face and having width W1 and length L1. A determining section for determining the width W1 of the structure is formed in the mask pattern. The width of the determining section for the width W1 of the mask pattern has width W2. The width of the mask pattern other than the determining section is larger than the width W2 over a length direction of the mask pattern. COPYRIGHT: (C)2010,JPO&INPIT
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