发明名称 CAPACITIVE SEMICONDUCTOR PHYSICAL QUANTITY SENSOR
摘要 <P>PROBLEM TO BE SOLVED: To provide a capacitive semiconductor physical quantity sensor whose degradation in performance due to the existence of gas inside an airtight space can be prevented, and whose upsizing due to a gas trap function can be evaded. Ž<P>SOLUTION: A cavity 17c in a pressure sensor region communicates with cavities 17b, d in an acceleration sensor region, and the cavity 17c and the cavities 17b, 17d form a cavity. As a result, a cavity having a very large volume as compared to that of the cavity in the single separate body of the pressure sensor is secured, and even if gas is generated in a sealed space between a glass substrate and a silicon substrate, the gas can be spread into the cavity having the comparatively large volume. Accordingly, the degradation in performance of the sensor due to the existence of the gas can be prevented. Moreover, a getter chamber or the like is not provided, thereby the upsizing of the sensor due to the gas trap function can be evaded. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010054212(A) 申请公布日期 2010.03.11
申请号 JP20080216409 申请日期 2008.08.26
申请人 PANASONIC ELECTRIC WORKS CO LTD 发明人 ENOMOTO HIDEKI;IBARA NOBUYUKI;SAKAI KOJI;NOMURA MASATOSHI;KAKIMOTO KATSUMI;MESHII RYOSUKE;FUKUDA SUMIHISA;KOBAYASHI SHOICHI;KASHIBATA AIKO
分类号 G01L9/00;G01P15/125;H01L29/84 主分类号 G01L9/00
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