| 发明名称 |
HIGH SENSITIVITY PHOTODETECTORS, IMAGING ARRAYS, AND HIGH EFFICIENCY PHOTOVOLTAIC DEVICES PRODUCED USING ION IMPLANTATION AND FEMTOSECOND LASER IRRADIATION |
| 摘要 |
<p>The present invention relates generally to methods for high throughput and controllable creation of high performance semiconductor substrates for use in devices such as high sensitivity photodetectors, imaging arrays, high efficiency solar cells and the like, to semiconductor substrates prepared according to the methods, and to an apparatus for performing the methods of the invention.</p> |
| 申请公布号 |
WO2010028177(A1) |
申请公布日期 |
2010.03.11 |
| 申请号 |
WO2009US55931 |
申请日期 |
2009.09.03 |
| 申请人 |
SIONYX, INC.;CAREY, JAMES;LI, XIA;MCCAFFREY, NATHANIEL |
发明人 |
CAREY, JAMES;LI, XIA;MCCAFFREY, NATHANIEL |
| 分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
| 代理机构 |
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