| 摘要 |
<p>A light source[40] and method for fabricating the same are disclosed. The light source includes a substrate[21] and first and second semiconductor layers[22, 24] that surround an active layer[23]. The first layer includes a material of a first conductivity type adjacent to the substrate. The active layer overlies the first layer and generates light when holes and electrons recombine therein. The second layer includes a material of a second conductivity type overlying the active layer, the second layer having a first surface overlying the active layer and a second surface opposite to the first surface. A trench[48] extends through the second layer and the active layer into the first layer. The trench has electrically insulating walls[45]. A first electrode[47] is disposed in the trench such that the first electrode is in electrical contact with the first layer, and the second electrode[26] is in electrical contact with the second layer.</p> |
