| 摘要 |
PURPOSE: A mask pattern and a method for manufacturing a semiconductor device using the same are provided to prevent the misalignment between a metal wiring and a via contact from generating by simultaneously forming the metal wiring and the via contact with one identical mask. CONSTITUTION: A first mask region(120a) with a dark tone for blocking a light is formed. A second mask region(110a) with a half tone for forming a metal wiring is formed. A third mask region(100a) with a clear tone for forming a via contact is formed. The component of the first and the second mask regions includes chrome. The transmittance of the second mask region ranges between 20 to 30%.
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