发明名称 |
SEMICONDUCTOR MEMORY DEVICE WITH FLOATING BODY CELL AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PURPOSE: A semiconductor memory device with a floating body cell and a method for manufacturing the same are provided to reduce a manufacturing cost and improve the efficiency of the device by increasing the charge storage space of a floating body. CONSTITUTION: A silicon substrate(21) with a first recess is prepared. An insulation layer(22) is formed on the silicon substrate and includes a second recess on a position which corresponds to the first recess. A semiconductor layer(23) is formed on the insulation layer and includes a third recess on a position which corresponds to the first recess. A gate(25) is formed on the third recess. The semiconductor layer includes source/drain regions(26A, 26B) and floating body(27) between the source/drain regions.
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申请公布号 |
KR20100027394(A) |
申请公布日期 |
2010.03.11 |
申请号 |
KR20080086295 |
申请日期 |
2008.09.02 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
KIM, SOOK JOO;SUNG, MIN GYU;LEE, SEUNG RYONG |
分类号 |
H01L27/115;H01L21/336;H01L21/8247 |
主分类号 |
H01L27/115 |
代理机构 |
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地址 |
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