发明名称 SEMICONDUCTOR MEMORY DEVICE WITH FLOATING BODY CELL AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE: A semiconductor memory device with a floating body cell and a method for manufacturing the same are provided to reduce a manufacturing cost and improve the efficiency of the device by increasing the charge storage space of a floating body. CONSTITUTION: A silicon substrate(21) with a first recess is prepared. An insulation layer(22) is formed on the silicon substrate and includes a second recess on a position which corresponds to the first recess. A semiconductor layer(23) is formed on the insulation layer and includes a third recess on a position which corresponds to the first recess. A gate(25) is formed on the third recess. The semiconductor layer includes source/drain regions(26A, 26B) and floating body(27) between the source/drain regions.
申请公布号 KR20100027394(A) 申请公布日期 2010.03.11
申请号 KR20080086295 申请日期 2008.09.02
申请人 HYNIX SEMICONDUCTOR INC. 发明人 KIM, SOOK JOO;SUNG, MIN GYU;LEE, SEUNG RYONG
分类号 H01L27/115;H01L21/336;H01L21/8247 主分类号 H01L27/115
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