| 摘要 |
PURPOSE: A bipolar junction transistor of poly-emitter type, a bipolar CMOS DMOS(BCD) device, a method for manufacturing the bipolar junction transistor of poly emitter type and a method for manufacturing the BCD device are provided to manufacture the bipolar junction transistor of poly-emitter type which is integrated into a complex-high voltage device using a complex-high voltage device process. CONSTITUTION: A buried layer(110) is formed on the part of the upper side of a semiconductor substrate(100). An epi-layer(120) is formed on the semiconductor substrate. A collector region(130) is formed on the epi layer and is connected to the buried layer. A base region is formed on the part of the upper side of the epi layer. A poly-emitter region is formed on the substrate surface of the base region and is composed of poly-silicon material.
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