SEMICONDUCTOR DEVICE HAVING VERTICAL FIELD EFFECT TRANSISTOR, AND MANUFACTURING METHOD THEREOF

摘要

<P>PROBLEM TO BE SOLVED: To further raise the integration degree of a semiconductor device using a vertical field effect transistor (FET). Ž<P>SOLUTION: The semiconductor device 1 includes an insulating substrate 10, a first semiconductor layer 21 of a first conductivity type formed on the insulating substrate 10, a first vertical FET (NFET) of a first conductivity type channel whose source or drain (one or the other) is formed on the first semiconductor layer 21, a second semiconductor layer 22 of a second conductivity type formed on the insulating substrate 10, and a second vertical FET (PFET) of a second conductivity type channel whose source or drain (one or the other) is formed on the second semiconductor layer 22. The first semiconductor layer 21 directly contacts the second semiconductor layer 22. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž