| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a small-sized high-frequency low-noise amplifier of low consumption, in which a low noise, an enhanced power resistance characteristic, with respect to excessive input and high gain characteristics can be attained. Ž<P>SOLUTION: The high-frequency low-noise amplifier 10 includes an amplification circuit 12 at a first stage which uses as a base a high electron mobility transistor (HEMT) having GaN by which a low noise, a high-power resistance characteristic, with respect to excessive input and a high gain can be achieved, and an amplification circuit 13 at succeeding stages which uses, as a base, a high electron mobility transistor (HEMT) having GaAs, by which low consumption and miniaturization can be attained. In addition, these transistors are subjected to multi-stage cascade connection as a configuration for the amplifier. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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