| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that achieves both a high breakdown voltage and a quick operation. Ž<P>SOLUTION: The semiconductor device has a pn junction type diode including an N-type semiconductor layer 2 formed on an N-type semiconductor 1, a P-type first diffusion layer 4 formed on a surface of the semiconductor layer 2, a P-type second diffusion layer 4 formed on the surface of the semiconductor layer 2 apart from the first diffusion layer 4 and enclosing the first diffusion layer 4, a P-type third diffusion layer 5 formed on a surface of the first diffusion layer 4, a P-type fourth diffusion layer 7 formed on a surface of the second diffusion layer 4, an N-type fifth diffusion layer 6 formed on the surface of the first diffusion layer 4 and electrically connected to the third diffusion layer 5, and an N-type sixth diffusion layer 8 formed straddling the surface of the second diffusion layer 4 and the surface of the semiconductor layer 2 and electrically connected to the fourth diffusion layer 7. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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