发明名称 METHOD OF FORMING GATE INSULATING FILM, METHOD OF MANUFACTURING ORGANIC THIN-FILM TRANSISTOR, AND ORGANIC THIN-FILM DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of forming high-performance polymer gate insulating film on glass or a flexible substrate by a simple wet process. Ž<P>SOLUTION: In the method of forming a gate insulating film on a substrate using a wet process, a polymer material is applied on the substrate to form a polymer film, and the surface of the polymer film is treated with a finishing agent thereafter. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2010056115(A) 申请公布日期 2010.03.11
申请号 JP20080216398 申请日期 2008.08.26
申请人 KONICA MINOLTA HOLDINGS INC 发明人 KOFUCHI REIKO;HIRAI KATSURA
分类号 H01L21/336;H01L29/786;H01L51/05 主分类号 H01L21/336
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