发明名称 |
METHOD OF FORMING GATE INSULATING FILM, METHOD OF MANUFACTURING ORGANIC THIN-FILM TRANSISTOR, AND ORGANIC THIN-FILM DEVICE |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming high-performance polymer gate insulating film on glass or a flexible substrate by a simple wet process. Ž<P>SOLUTION: In the method of forming a gate insulating film on a substrate using a wet process, a polymer material is applied on the substrate to form a polymer film, and the surface of the polymer film is treated with a finishing agent thereafter. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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申请公布号 |
JP2010056115(A) |
申请公布日期 |
2010.03.11 |
申请号 |
JP20080216398 |
申请日期 |
2008.08.26 |
申请人 |
KONICA MINOLTA HOLDINGS INC |
发明人 |
KOFUCHI REIKO;HIRAI KATSURA |
分类号 |
H01L21/336;H01L29/786;H01L51/05 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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