Semiconductor Device and Method of Forming Vertically Offset Bond on Trace Interconnects on Recessed and Raised Bond Fingers

摘要

A semiconductor device has a vertically offset bond on trace (BOT) interconnect structure. The vertical offset is achieved by forming a first conductive layer extending above a surface of a carrier. The first conductive layer is pressed into a surface of a substrate so that the first conductive layer is recessed below the surface of the substrate. The carrier is removed. A second conductive layer is formed above the surface of the substrate to create the vertical offset between the first and second conductive layers. The vertical offset is about 20 micrometers. A conductive via is formed through the substrate. Bond wire bumps are formed on the first and second conductive layers. The bond wire bumps are about 10 micrometers in height. A seed layer is formed over the carrier prior to forming the first conductive layer and removed after forming the second conducive layer.