发明名称 |
METHOD OF FORMING CRYSTALLIZED SILICON AND METHOD OF FABRICATING THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY USING THE SAME |
摘要 |
A method of crystallizing amorphous silicon comprises forming an amorphous silicon layer on a substrate; forming an insulating layer on the amorphous silicon layer; forming a heat distributing metal layer on the insulating layer; and forming a thermite layer on the heat distributing metal layer. Ignition heat is then applied to ignite the thermite layer and generate sufficient localized exothermic heat from the ignited thermite layer so as to crystallize the amorphous silicon layer. The substrate beneath the amorphous silicon layer can be a heat sensitive substrate which is not substantially deformed by the localized crystallizing heat applied to the top portion of the amorphous silicon layer by way of the heat distributing metal layer and the insulating layer.
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申请公布号 |
US2010062555(A1) |
申请公布日期 |
2010.03.11 |
申请号 |
US20090412682 |
申请日期 |
2009.03.27 |
申请人 |
HWANG TAE-HYUNG;KIM HYUN-JAE;KIM DO-KYUNG;JEONG WOONG-HEE;LEE CHOONG-HEE;JUNG TAE-HUN |
发明人 |
HWANG TAE-HYUNG;KIM HYUN-JAE;KIM DO-KYUNG;JEONG WOONG-HEE;LEE CHOONG-HEE;JUNG TAE-HUN |
分类号 |
H01L21/70;H01L21/3205;H01L21/336 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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