| 发明名称 |
SEMICONDUCTOR TRENCH STRUCTURE HAVING A SEALING PLUG AND METHOD |
| 摘要 |
In one embodiment, a semiconductor device is formed having a trench structure. The trench structure includes a single crystalline semiconductor plug formed along exposed upper surfaces of the trench. In one embodiment, the single crystalline semiconductor plug seals the trench to form a sealed core.
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| 申请公布号 |
US2010059815(A1) |
申请公布日期 |
2010.03.11 |
| 申请号 |
US20080206541 |
申请日期 |
2008.09.08 |
| 申请人 |
GRIVNA GORDON M;LOECHELT GARY H;PARSEY JR JOHN MICHAEL;QUDDUS MOHAMMED TANVIR |
发明人 |
GRIVNA GORDON M.;LOECHELT GARY H.;PARSEY, JR. JOHN MICHAEL;QUDDUS MOHAMMED TANVIR |
| 分类号 |
H01L29/78;H01L21/336;H01L27/06 |
主分类号 |
H01L29/78 |
| 代理机构 |
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