发明名称 RF POWER DELIVERY SYSTEM IN A SEMICONDUCTOR APPARATUS
摘要 Embodiments of the invention provide an apparatus which provide good RF uniformity within a processing chamber. In one embodiment, an apparatus includes a substrate support assembly, a terminal, and a dielectric insulator. The substrate support assembly has a center passage formed along a center axis. An RF transmission line is provided. The RF transmission line has a substantially vertical portion and a substantially horizontal portion, wherein the terminal is coupled to the substantially horizontal portion of the RF transmission line. The dielectric insulator circumscribes the substantially horizontal portion of the RF transmission line. The dielectric insulator has a first opening through which the terminal passes.
申请公布号 WO2009158192(A3) 申请公布日期 2010.03.11
申请号 WO2009US46842 申请日期 2009.06.10
申请人 APPLIED MATERIALS, INC.;CHEN, ZHIGANG;RAUF, SHAHID;RAMASWAMY, KARTIK 发明人 CHEN, ZHIGANG;RAUF, SHAHID;RAMASWAMY, KARTIK
分类号 H01L21/3065;H05H1/34 主分类号 H01L21/3065
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