SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR DEVICE
摘要
An anti-fuse memory device includes a plurality of word lines, a plurality of bit lines, and a memory cell provided with respect to an intersecting portion of any of the plurality of word lines and any of the plurality of bit lines. Memory cell includes a PIN diode and an anti-fuse. An anode of the PIN diode is electrically connected to any of the bit lines. A cathode of the PIN diode is electrically connected to a first terminal of the anti-fuse. A second terminal of the anti-fuse is electrically connected to any of the word lines. The anti-fuse includes a silicon layer and an insulating layer which are interposed between electrodes.
申请公布号
WO2010026865(A1)
申请公布日期
2010.03.11
申请号
WO2009JP64369
申请日期
2009.08.10
申请人
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;KOYAMA, JUN;MIYAGUCHI, ATSUSHI