| 摘要 |
PURPOSE: A semiconductor light emitting device and a method for manufacturing the same are provided to improve the electric and the optical efficiency of a semiconductor light emitting device by forming a current spreading structure between a first conductive semiconductor layer and a substrate. CONSTITUTION: A first conductive semiconductor layer(120) is formed on a substrate(101). An un-doped semiconductor layer(110) including a spreading structure(115) is formed on the lower side of the first conductive semiconductor layer. An active layer(130) is formed on the first conductive semiconductor layer. A second conductive semiconductor layer(140) is formed on the active layer. The spreading structure includes a semiconductor layer in which the high-concentration of a first conductive dopant is doped.
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