SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A semiconductor device and a method for manufacturing the same are provided to manufacture a thin film transistor with superior dynamic property by forming an oxygen-deficient oxide semiconductor layer of which carrier concentration is higher than the carrier concentration of an oxide semiconductor layer for forming a channel formation area. CONSTITUTION: A gate electrode(101) is formed on a substrate(100). A gate insulation layer(102) is formed on the gate electrode. A semiconductor layer(103) is formed on a gate insulation layer. A source region(104a) and a drain region(104b) are formed on the semiconductor layer. The source region and the drain region are oxide semiconductor layer and include lower oxygen content than the oxygen content of the semiconductor layer.