| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to realize the high integration of the device by performing a punch stop process and a channel ion-implantation process with a reduced thickness of an ion-implantation mask. CONSTITUTION: A first mask pattern with a first thickness is formed on a semiconductor substrate(200). A first ion-implantation process is performed on the semiconductor substrate using a first mask pattern as an ion-implantation mask. A well ion-implant area(206) is formed in the semiconductor substrate. A field stop ion-implantation area(208) is formed on the upper side of the ion-implantation area. A part of the thickness of the first mask pattern to form a second mask pattern(204a) with a second thickness. The second thickness is thinner than the first thickness. A second ion-implantation process is performed on the semiconductor substrate using the second mask pattern as a ion-implantation mask.</p> |
