METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to prevent short-circuits between gate lines and a landing plug by forming the landing plug an active area of a substrate. CONSTITUTION: An element isolation layer(21) and an active area(20A) are formed on a substrate(20). A trench is formed by etching the substrate on which the element isolation layer is formed. Gate lines(G) are formed on a trench. A first interlayer insulation layer(25) is formed to fill a space between gate lines. A landing plug contact hole(26) which exposes the active area is formed in the first interlayer insulation layer. The landing plug contact hole is filled to form a landing plug.