发明名称 Interdigitated Back Contact Silicon Solar Cells with Laser Ablated Grooves
摘要 Interdigitated back contact (IBC) solar cells are produced by depositing spaced-apart parallel pads of a first dopant bearing material (e.g., boron) on a substrate, heating the substrate to both diffuse the first dopant into corresponding first (e.g., p+) diffusion regions and to form diffusion barriers (e.g., borosilicate glass) over the first diffusion regions, and then disposing the substrate in an atmosphere containing a second dopant (e.g., phosphorus) such that the second dopant diffuses through exposed surface areas of the substrate to form second (e.g., n+) diffusion regions between the first (p+) diffusion regions (the diffusion barriers prevent the second dopant from diffusion into the first (p+) diffusion regions). The substrate material along each interface between adjacent first (p+) and second (n+) diffusion regions is then removed (e.g., using laser ablation) such that elongated grooves, which extend deeper into the substrate than the diffused dopant, are formed between adjacent diffusion regions.
申请公布号 EP2161757(A2) 申请公布日期 2010.03.10
申请号 EP20090169244 申请日期 2009.09.02
申请人 PALO ALTO RESEARCH CENTER INCORPORATED 发明人 NAKAYASHIKI, KENTA;XU, BAOMIN
分类号 H01L31/0224;H01L31/068;H01L31/18 主分类号 H01L31/0224
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