PURPOSE: A silicon thin film solar cell and a manufacturing method thereof are provided to broaden a light concentration surface area and improve the absorption rate of light by maximizing an area absorbing light through an anodizing. CONSTITUTION: A plurality of holes are formed on the single side of a substrate(10). A metal layer(20) is formed on the inner wall of the hole and the single side of the substrate. A p-type semiconductor(30) is coated on the metal layer. A n-type semiconductor(40) is formed on the inside of the hole and the single side of the substrate. A transparent electrode(50) is formed in the n-type semiconductor. An electrode terminal(60) is formed in the p-type semiconductor and the transparent electrode. The hole is formed by the anodizing process.
