| 摘要 |
PURPOSE: A contact forming method of a semiconductor device is provided to easily form the contact without the reduction of a gate line width by forming a landing plug contact by executing two-step self-aligned etching process. CONSTITUTION: A substrate(11) includes a cell region including a gate and a peripheral circuit region. A first spacer(15-1) is formed in the gate sidewall of the peripheral circuit region by selectively etching a first insulating layer of the peripheral circuit region. A second spacer(17-1) is formed on the gate surface of the peripheral circuit region by evaporating a first nitride layer to the front side of the cell and the peripheral region. A third spacer(21-1) is formed on the gate surface of the peripheral circuit region. A second insulating layer planarized in the front side of the cell region and the peripheral region is buried. A contact for a landing plug is formed by executing a self-aligned etching process.
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