MULTI-CHANNEL FET DEVICE STRUCTURE AND ITS FABRICATION METHOD USING NANO-STRUCTURE MATERIALS

摘要

PURPOSE: A multi-channel field effect transistor(FET) device and a method for manufacturing the same are provided to improve an electron mobility by adjusting nano-structure materials of each channel to be arranged in a single direction. CONSTITUTION: A dielectric insulation thin film is formed on a substrate(50). A back gate electrode(20) is formed on the insulation thin film. A dielectric thin film(54) exposes a back gate electrode pad and is deposited on the back gate electrode. The two or more rows of a multi-channel(40) include nano-materials on the dielectric thin film. The drain electrode of the vertical symmetry(10) is formed on the upper side and the lower side of the multi-channel. A source electrode(30) is formed on one side of the multi-channel.