PURPOSE: A wafer drying method is provided to improve a Marangoni effect and prevent generation of water mark by forming an oxide film on a wafer surface by applying ozone water at lat rinse stage before drying. CONSTITUTION: A wafer is cleaned(S1). The surface of the wafer is rinsed to be a hydrated wafer by using the ozone water(S2). A Marangoni drying step is executed(S3). An IPA(IsoPropyl Alcohol) gas is sprayed in the top part of the wafer and the wafer is dried by lowering a surface tension by supplying super-pure water or the ozone water at the temperature from 5°C to 25°C in the lower part of the wafer.
