发明名称 |
MICRO CANTILEVER AND METHOD OF MANUFACTURING THE SAME AND SILICON THIN FILM AND METHOD OF MANUFACTURING THE SAME |
摘要 |
PURPOSE: A micro cantilever, a silicon thin film, and a manufacturing method thereof are provided to control the low thermal budget of a stress gradient by using a built-up stress generated from a Cu-silicide process. CONSTITUTION: A substrate(10) is prepared. A sacrificial layer is evaporated on the top of the substrate. The sacrificial layer is etched in order to eliminate a part of the sacrificial layer. A cantilever structure layer(20) is evaporated on the exposed substrate part and the sacrificial layer by removing a part of the sacrificial layer. A Cu- thin film(30) is evaporated on the cantilever structure layer. A Cu-silicide(40) is formed on the cantilever structure layer by a furnace annealing in the Cu-thin film. The furnace anneal temperature is 200 °C or less.
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申请公布号 |
KR20100026021(A) |
申请公布日期 |
2010.03.10 |
申请号 |
KR20080084827 |
申请日期 |
2008.08.29 |
申请人 |
SNU R&DB FOUNDATION |
发明人 |
KIM, YONG HYUP;KANG, TAE JUNE |
分类号 |
H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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