发明名称 MICRO CANTILEVER AND METHOD OF MANUFACTURING THE SAME AND SILICON THIN FILM AND METHOD OF MANUFACTURING THE SAME
摘要 PURPOSE: A micro cantilever, a silicon thin film, and a manufacturing method thereof are provided to control the low thermal budget of a stress gradient by using a built-up stress generated from a Cu-silicide process. CONSTITUTION: A substrate(10) is prepared. A sacrificial layer is evaporated on the top of the substrate. The sacrificial layer is etched in order to eliminate a part of the sacrificial layer. A cantilever structure layer(20) is evaporated on the exposed substrate part and the sacrificial layer by removing a part of the sacrificial layer. A Cu- thin film(30) is evaporated on the cantilever structure layer. A Cu-silicide(40) is formed on the cantilever structure layer by a furnace annealing in the Cu-thin film. The furnace anneal temperature is 200 °C or less.
申请公布号 KR20100026021(A) 申请公布日期 2010.03.10
申请号 KR20080084827 申请日期 2008.08.29
申请人 SNU R&DB FOUNDATION 发明人 KIM, YONG HYUP;KANG, TAE JUNE
分类号 H01L21/205 主分类号 H01L21/205
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