METHOD OF GROWING THE NANO STRUCTURES OF ZINC OXIDE USING MOCVD HAVING CARRIER GAS

摘要

PURPOSE: A zinc oxide structure growth method using a metal organic chemical vapor deposition method introducing a gas carrier is provided to form a vertical nano-bar by controlling the flow rate of a gas carrier. CONSTITUTION: The flow rate of oxygen precursor source gas and diethyl zinc precursor is controlled and the gases are supplied through a gas feed assembly to a reaction container. A zinc oxide structure grows up on a substrate by ejecting a diethyl zinc precursor and oxygen precursor source gas through a gas ejecting unit which is installed inside the reaction container. The source gas comprises a carrier gas. The carrier gas is argon gas. The inner pressure of the reaction container is 0.1 ~ 1.0 Tor. The inner temperature of the reaction container is 300 ~ 400°C.