METHOD OF MANUFACTURING AN EPITAXIAL WAFER AND THE EPITAXIAL WAFER APPLYING THE SAME AND SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing an epitaxial wafer, the epitaxial wafer thereby and a semiconductor device using the epitaxial wafer are provided to prevent the penetration of an oxygen precipitate into an epi-layer by annealing a wafer substrate prior to the formation of the epi-layer. CONSTITUTION: A wafer substrate with a first doping concentration is prepared(S210). The wafer substrate is pre-annealed in a first gas atmosphere(S220). In a nitrogen atmosphere or the atmosphere of a mixed gas of the nitrogen and an oxygen, the wafer substrate is annealed(S230). An oxide layer formed during the annealing process is removed(S240). One or more epi-layers are formed on the annealed wafer substrate(S250).