| 摘要 |
PURPOSE: A method for forming a semiconductor device is provided to form a fine pattern by improving a process margin and realizing a resolution beyond optical limits with a spacer patterning technique. CONSTITUTION: A layer to be etched(12) and a first hard mask layer are formed on the upper side of a semiconductor substrate(10). A first mask layer is patterned on the high-density area(1000) and the low-density area(2000) of a semiconductor device with a exposure mask. A first spacer(20) is formed on the side wall of the first hard mask layer in the high-density area. A second spacer is formed on the side wall of the first hard mask layer in the low-density area. The end part to which the first spacer is connected is etched to form a first spacer pattern using a second exposure mask. A second hard mask layer(28) which exposes the first spacer pattern and the second spacer is formed. |
