发明名称 PREPARATION OF COPPER THIN FILMS USING COPPER PRECURSOR BY ATOMIN LAYER DEPOSITION
摘要 PURPOSE: A method for manufacturing copper thin films using copper precursor by an atomic layer deposition process is provided to manufacture a thin film which has exact composition and has uniform thickness. CONSTITUTION: A method for manufacturing copper thin films using copper precursor by an atomic layer deposition process comprises following steps. The copper amino alkoxide is supplied to an atomic layer deposition reactor and copper chemical species are adsorbed on a substrate. Copper element and reaction by-products which do not react are eliminated from the reactor. Ligand is removed from the substrate by supplying hydrogen plasma to the reactor. The reaction by-product is eliminated from the reactor.
申请公布号 KR20100025870(A) 申请公布日期 2010.03.10
申请号 KR20080084602 申请日期 2008.08.28
申请人 KOREA RESEARCH INSTITUTE OF CHEMICAL TECHNOLOGY 发明人 LEE, SUN SOOK;AN, KI SEOK;CHUNG, TAEK MO;KIM, CHANG GYOUN;LEE, BYUNG KOOK
分类号 C23C16/18;C23C16/455 主分类号 C23C16/18
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