发明名称 |
SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM, AND THEIR MANUFACTURING METHOD |
摘要 |
A sputtering target composed of indium oxide and zinc oxide. The content of zinc atoms ranges from 3 to 20 atom% based on the total of indium atoms and zinc atoms. The maximum particle diameter of the crystals in the sputtering target is 5μm ore less. Few nodules are produced on the surface of the target while a transparent conductive film is formed by sputtering, and therefore the sputtering is conducted stably.
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申请公布号 |
KR20100027247(A) |
申请公布日期 |
2010.03.10 |
申请号 |
KR20107003350 |
申请日期 |
2002.07.08 |
申请人 |
IDEMITSU KOSAN CO., LTD. |
发明人 |
INOUE KAZUYOSHI;MATSUZAKI SHIGEO |
分类号 |
C23C14/34;C23C14/08;C23C14/58;H01L21/203;H01L31/18 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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