PURPOSE: A multilayered complex chip device is provided to remove a noise element and perform an ESD(Electrostatic Discharge) protection in a high speed data line by implementing a common mode filter and a suppressor with one chip. CONSTITUTION: A multilayered complex chip device includes a suppressor layer and a common mode filter layer(60). An element is formed by stacking a plurality of sheets(10-50). The suppressor layer includes a plurality of discharge units. The discharge units are formed on the upper surface of the element for gap discharge. The common mode filter layer has a plurality of common mode electrode patterns. The common mode electrode patterns are formed on the sheets. The suppressor layer and the common mode filter layer are implemented as one chip.
申请公布号
KR20100026199(A)
申请公布日期
2010.03.10
申请号
KR20080085109
申请日期
2008.08.29
申请人
AMOTECH CO., LTD.
发明人
JOO, HYUN TAE;HWANG, YOON HO;RYU, JAE SU;LIM, BYUNG GUK;LEE, JAE WOOK;JO, MIN SOO