| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to form a fine pattern and a contact hole with the resolution of a photoresist film pattern by controlling a critical dimension through trimming after forming a carbon based pattern as a sacrificial layer. CONSTITUTION: A carbon based pattern is formed on a substrate(11). The carbon based pattern is trimmed. An insulation layer for filling the trimmed carbon based pattern is formed on the substrate. The insulation layer is etched to expose the surface of the carbon based pattern. A contact hole(16) is formed by removing the carbon based pattern.
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