FERROELECTRIC RANDOM ACCESS MEMORY FAIL BIT SCREENING METHOD AND THE MEMORY DEVICE

摘要

PURPOSE: A ferroelectric random access memory device is provided to secure a sensing margin by differently generating voltages which is applied to a reference cell and a memory cell. CONSTITUTION: A reference cell(310) is composed of a ferroelectric random access capacitor and transistor. A memory cell(320) is composed of a ferroelectric random access capacitor and transistor. A DC generator is formed in the reference cell and generates a large range of a driving voltage. The capacitor of the reference cell and the capacitor of the memory cell occupy the identical size of area. The memory cell includes the DC generator.