| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device is provided to prevent impurities from diffusing to a floating body by etching a part of a source/drain area of a floating body transistor. CONSTITUTION: A lower silicon layer(202), a buried insulation layer(204) and an upper silicon layer(206) form a silicon on insulator substrate. A gate oxide layer(208) is deposited on the upper side of the upper silicon layer. The area for a source/drain area is prepared on a semiconductor substrate by etching. A conductive material(211) is deposited on the prepared area and the semiconductor substrate. A gate and a source/drain are formed by patterning. The conductive material is deposited on the prepared area and the gate oxide layer.</p> |
