发明名称 ACTIVATED GAS INJECTOR, FILM FORMATION APPARATUS AND FILM FORMATION METHOD
摘要 <p>PURPOSE: An activated gas injector, a film formation apparatus and a film formation method are provided to form a stacked thin film by performing several cycles for supplying different reactive gases on the surface of a substrate. CONSTITUTION: A flow passage defining unit is divided into a gas activation passage and a gas introduction passage by a partition wall. A gas introduction part introduces a process gas to the gas introduction passage. A pair of electrodes(36a, 36b) are installed in the gas activation passage along the partition wall. A through hole(341) supplies the process gas in the gas introduction passage to the gas activation passage. A gas ejection hole(33) is installed in the gas activation passage and ejects the activated gas.</p>
申请公布号 KR20100027062(A) 申请公布日期 2010.03.10
申请号 KR20090080671 申请日期 2009.08.28
申请人 TOKYO ELECTRON LIMITED 发明人 KATO HITOSHI;TAKEUCHI YASUSHI;USHIKUBO SHIGEHIRO;KIKUCHI HIROYUKI
分类号 H01L21/205;H01L21/02 主分类号 H01L21/205
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