| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to form an electrostatic discharge protection element including the same withstand voltage as a junction withstand voltage of a main body transistor by increasing the impurity concentration of a drift region without changing the number of process. CONSTITUTION: Drain regions(11, 31) include a first conductive semiconductor layer. A drift layer(12) includes the first conductive semiconductor region. Body regions(14, 34) include a second conductive semiconductor region which is formed in the drift regions. A gate insulation layer(18) is formed on the surface of body regions and drift regions. Gate electrodes(17, 37) are formed on the gate insulation layer. |
