| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to simplify the manufacturing process by removing a silicide formation process for reducing contact resistance between a gate electrode and a source/drain area. CONSTITUTION: A gate structure(40) is formed on a semiconductor substrate(10). A spacer(45) is formed on the sidewall of the gate structure. A source/drain area(50) is formed in the area which is adjacent to the gate structure and the space. A high-concentration impurity area(60) is selectively formed on the source/drain area. A high-concentration impurity area is formed by implanting N+ impurity.
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