METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A RECESSED CHANNEL

摘要

PURPOSE: A method for manufacturing a semiconductor device including a recessed channel is provided to prevent a bridge between metal nitride and poly-silicon from generating by selectively etching a lower conductive layer. CONSTITUTION: A gate oxide layer(114) is conformally formed on a semiconductor substrate in which a trench(112a) is formed. A gate structure including the stacked structure of a lower conductive layer pattern(116a), a poly-silicon layer pattern(118a), an upper conductive layer pattern(126a) and a mask is formed. A capping layer is formed on the gate structure and the substrate. A capping layer spacer is formed on the sidewall of the gate structure. Impurities are implanted to the substrate to form a source/drain using the capping layer spacer and the gate structure as a ion-implantation mask.