NON-VOLATILE MEMORY DEVICE AND METHOD AT THE SAME

摘要

PURPOSE: A non-volatile memory device and a manufacturing method thereof are provided to improve productivity by forming a protrusion plug formed by a rapid thermal annealing method on a contact plug exposed by an interlayer insulating film. CONSTITUTION: A transistor is formed on a substrate(10). An interlayer insulating film includes a contact hole selectively exposing the substrate corresponding to the source/drain region of the transistor. A contact plug(36) is formed inside the contact hole. A protrusion plug(38) which is highly protruded than the height of the interlayer insulating layer in the upper part of the contact plug is formed. A capacitor(46) composing of a bottom electrode(40) protruding to the interlayer insulating layer, a ferroelectric, and an upper electrode is formed in the upper part of the protruded plug. The protruded plug is formed by rapid thermal annealing for the contact plug formed in the contact hole.