| 摘要 |
PURPOSE: A method for manufacturing the capacitor of a semiconductor device is provided to prevent a leakage current from generating due to the thickness reduction of a dielectric layer by uniformly forming the dielectric layer on the lower electrode of a cylindrical shape. CONSTITUTION: The lower electrode(300) of a cylindrical shape is formed on a semiconductor substrate. A first dielectric layer(410) is deposited on the lower electrode. The first dielectric layer is heavily deposited on the protrusion end of the lower electrode(412). The thickness of the heavily deposited layer is reduced by etching. The first dielectric layer is lightly deposited on the corner of the lower electrode(413). The thickness of the lightly deposited layer is reinforced by a second dielectric layer. An upper electrode is formed on the second dielectric layer.
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