QUANTUM DOT SOLAR CELL AND THE FABRICATION METHOD THEREOF

摘要

PURPOSE: A quantum dot solar cell and a method for manufacturing the same are provided to obtain the high efficiency of photoelectric conversion by including a light absorption property with a wide wavelength range and the high efficiency of electron-hole separation. CONSTITUTION: A semiconductor quantum dot thin film(122) forms a semiconductor quantum dot(132) inside a medium(131) in which the same impurity as a semiconductor substrate(110) is doped. A pore array which penetrates through the semiconductor quantum dot thin film is formed by partial-etching. An impurity-doped semiconductor is deposited on the semiconductor quantum dot thin film. The impurity is complement to the semiconductor substrate. A transparent oxide conductor layer and an upper electrode are successively formed on the complementary impurity doped-semiconductor. A lower electrode is formed on the lower side of the semiconductor substrate.