METAL WIRING OF SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: The metal wiring of a semiconductor device and a method for manufacturing the same are provided to prevent copper from diffusing by forming a diffusion barrier layer which is composed of a multi-structure of a Ta(1-x)Cx layer, a TaxCyNz layer and a Ta(1-y)Ny layer. CONSTITUTION: An insulation layer(110) is formed on the upper side of a semiconductor substrate(100). The insulation layer includes an wiring formation area(D). A diffusion barrier layer(130) is formed on the wiring formation area of the insulation layer. The diffusion barrier layer includes a multi-layer of a Ta(1-x)Cx layer(112), a TaxCyNz layer(116) and a Ta(1-y)Ny layer(114). A metal layer is formed on the diffusion barrier layer in order to fill the wiring formation layer.