| 摘要 |
<p>1,045,373. Connecting leads to semi-conductors. INTERNATIONAL STANDARD ELECTRIC CORPORATION. May 21, 1965 [May 26, 1964], No. 21596/65. Heading H1K. A connection is made to a semi-conductor electrode 12 by applying thereto solder 18 containing a major proportion of tin, cutting a gold wire 22 fed through a capillary tube 24, with a hydrogen flame to form a blob 26 and pressing the blob and the heated solder together to form an alloy which may contain Si. A silicon oxide layer 14 is provided for the device whilst the N<SP>*</SP> layer 16 has a nickel layer 20 applied thereto. In a modification an additional layer of opposite conductivity type (N) may be diffused into region 12 thus giving a transistor. Gold wire 22 may be replaced by Ag or Pt. A plurality of devices of the type shown may be made in a block of silicon.</p> |
