| 摘要 |
PURPOSE: A method for manufacturing a flash memory device is provided to remove a photomask process for forming an ohmic contact layer by injecting an n-type ion into the surface of the junction area of an NMOS transistor in order to form the ohmic contact layer. CONSTITUTION: A gate insulation layer(102) and a gate are formed on a semiconductor substrate(100) which includes a PMSO transistor area and an NMOS transistor area. A junction area is formed on the semiconductor substrate. An interlayer insulation layer(112) is formed on the upper side of the semiconductor substrate on which the gate and the junction area are formed. The interlayer insulation layer is etched to form contact holes(114a, 114b, 114c, 114d) in order to expose the junction area. An n-type ion is injected into the surface of the junction area to form an ohmic contact layer(116).
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